spc6801 description applications the spc6801combines the trench mosfet technology with a very low forward voltage drop schottky barrier rectifier in an tsop-6p package. the trench mosfet is the p-channel enhancement mode power field effect transistors are produced using high cell density , dmos trench technology. this high density process is especially tailored to minimize on-state resistance and provide superior switching performance. the schottky diode is provided to facilitate the implementation of a bidirectional blocking switc h, or for dc-dc conversion applications. z battery powered system z dc/dc converter z load switch z cell phone features pin configuration( tsop? 6p ) part marking ? p-channel -30v/-2.8a,rds(on)=105m ? @vgs=- 10v -30v/-2.5a,rds(on)=115m ? @vgs=-4.5v -30v/-1.5a,rds(on)=150m ? @vgs=-2.5v ? schottky vka (v) = 20v, if = 1a, vf<0.5v@0.5a ? super high density cell design for extremely low rds (on) ? exceptional on-resistance and maximum dc current capability ? tsop? 6p package design product specification 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
pin description pin symbol description 1 a schottky anode 2 s mosfet source 3 g mosfet gate 4 d mosfet drain 5 nc no connect 6 k schottky cathode ordering information part number package part marking SPC6801ST6rg tsop- 6p 81yw week code : a ~ z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) SPC6801ST6rg : tape reel ; pb ? free absoulte maximum ratings (t a =25 unless otherwise noted) typical parameter symbol p-channel schottky unit drain-source voltage v dss -30 v gate ?source voltage v gss 12 v t a =25 -2.8 continuous drain current(t j =150 ) t a =70 i d -2.1 a pulsed drain current i dm -10 a schottky reverse voltage v ka 20 v t a =25 1 continuous forward current t a =70 i f 0.7 a pulsed forward current i fm 10 a continuous source current(diode conduction) i s -1.4 a t a =25 1.15 0.9 power dissipation t a =70 p d 0.75 0.6 w operating junction temperature t j -55/150 storage temperature range t stg -55/150 t 10sec 52 thermal resistance-junction to ambient steady state r ja 90 /w spc6801 product specification 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics (t a =25 unless otherwise noted) parameter symbol conditions min. typ max. unit mosfet static drain-source breakdown voltage v (br)dss v gs =0v,i d =-10ua -30 gate threshold voltage v gs(th) v ds =v gs ,i d =-250ua -0.4 -1.0 v gate leakage current i gss v ds =0v,v gs =20v 100 na v ds =-24v,v gs =0v -1 zero gate voltage drain current i dss v ds =-24v,v gs =0v t j =55 -10 ua on-state drain current i d(on) v ds = -5v,v gs =-4.5v -4 a v gs =-10v,i d =-2.8a 0.085 0.105 v gs =-4.5v,i d =-2.5a 0.100 0.115 drain-source on-resistance r ds(on) v gs =-2.5v,i d =-1.5a 0.135 0.150 ? forward transconductance gfs v ds =-10v,i d =-2.8a 4.0 s diode forward voltage v sd i s =-1.2a,v gs =0v -0.8 -1.2 v mosfet dynamic total gate charge q g 5.8 gate-source charge q gs 0.8 gate-drain charge q gd v ds =-15v ,v gs =-4.5v i d -2.0a 1.5 nc input capacitance c iss 380 output capacitance c oss 55 reverse transfer capacitance c rss v ds =-15v ,v gs =0v f=1mhz 40 pf t d(on) 6 turn-on time t r 3.9 t d(off) 40 turn-off time t f v dd =-15v ,r l =15 ? i d -1.0a ,v gen =-10v r g =3 ? 15 ns schottky parameters forward voltage drop v f i f = 500ma 0.41 0.47 v reverse breakdown voltage v br i r = 500ua 20 v v r = 20v 0.1 maximum reverse leakage current irm v r = 20v , t j =70 1 ma v r = 10v 31 junction capacitance c t v r = 0v , f=1mhz 120 pf schottkyreverse recovery time t rr i f =1a, di/dt=100a/ s 5.4 10 ns schottky reverse recovery charge q rr i f =1a, di/dt=100a/ s 0.8 nc spc6801 product specification 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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